Description

Specification

• Transistor Type	NPN
  Maximum DC Collector Current	1 A
  Maximum Collector Emitter Voltage	60 V
  Package Type	TO-39
  Mounting Type	Through Hole
  Maximum Power Dissipation	5 W
  Minimum DC Current Gain	15
  Maximum Collector Base Voltage	100 V
  Maximum Operating Frequency	185 MHz
  Pin Count	3
  Number of Elements per Chip	1
  Maximum Operating Temperature	+175 °C
  Dimensions	9.4 (Dia.) x 6.6mm
  Maximum Base Emitter Saturation Voltage	2 V
  Maximum Collector Emitter Saturation Voltage	1.6 V
  Diameter	9.4mm
  Height	6.6mm

• QES PART : TRBFX85