£6.00
Motorola Semiconductor Products
TRANSISTOR,BJT,NPN,275V V(BR)CEO,10A I(C),TO-3
Specification
Type Designator: 2N6251
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: –
Package: TO3
Qes part : TR2N6251
QES specialises in providing a power supply repair service for all types of electronics. This includes linear and switched mode power supplies, DC/DC converters, inverters, battery chargers, power amplifiers and all other power supply repair products.
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